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A02044 | Pages: NA | Charts: NA | Tables: NA |
The market trend of high requirement of miniaturized version of storage devices is the reason behind the development of the 3D XPoint (pronounced as 3D cross point) technology. The way 3D XPoint works is fundamentally very different from that of NAND gate. Whereas NAND defines bit values by trapping a varying number of electrons in an insulated floating gate, 3D XPoint is a resistance-based technology that works by a bulk property change to alter the resistance level of a cell and thus differentiate between a 0 and 1 (the binary codes or the digital codes). The 3D XPoint structure is very simple. It consists of a selector and memory cell, which sit in between a word-line and bit-line (hence the "cross-point" name). Applying a specific voltage on the word-line and bit-line will activate a single selector and enable the cell underneath to be either written or read.
The main factors such as increased durability, great performance, large capacity storage, and high speed are the major reasons for the growth of the 3D XPoint market. Also, its low cost as compared to the present non-volatile storage devices is an important aspect that plays a major role behind its growth in the market. However, interface limitation is one of the major restraints in the path of the growth of the market.
The market for 3D XPoint is segmented into storage type, end user, and geography. The storage type is classified as 750 GB and 1.5 TB, and others. The end user is categorized into telecommunication, consumer electronics, automotive, healthcare, retail, and others. By geography, it is studied across North-America, Asia-Pacific, Europe, and LAMEA. The key players as mentioned in the report are IM Flash, Intel Corporation, Micron Technology, Inc., Numonyx B.V., Samsung Group, SK Hynix, Inc., Toshiba Corp., Western Digital Corp., and Mushkin Inc.
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