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2022

3D NAND Flash Memory Market

3D NAND Flash Memory Market Size, Share, Competitive Landscape and Trend Analysis Report by Type (Single-Level Cell, Multi-Level Cell, and Triple-Level Cell), Application (Camera, Laptops & PCs, Smartphones & Tablets, and Others), and End User (Automotive, Consumer Electronics, Enterprise, Healthcare, and Others): Global Opportunity Analysis and Industry Forecast, 2021-2030

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Author's: Himanshu Jangra| Tanumoy Upadhaya | Vineet Kumar
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3D NAND Flash Memory Market Outlook – 2030

The global 3D NAND flash memory market size was valued at $12.38 billion in 2020, and is projected to reach $78.42 billion by 2030, registering a CAGR of 20.3% from 2021 to 2030. 

3D NAND technology is an improved non-volatile flash memory technology with memory cells stacked vertically in numerous layers. Further, 3D NAND solutions are designed to reduce the per-bit cost and increase maximum chip capacity, to enhance the performance of flash memory. Moreover, 3D NAND employs charge trap technology rather than a typical floating rate. Charge-trap memory is based on silicon nitride sheets & stores charge on opposing sides of a memory.

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In addition, 3D NAND flashes storage solution in silicon power 3D NAND SD card is intended to use simpler algorithms that speed up the read/write performance by 1.3 to 2x faster. Moreover, the rise in penetration of next-generation Internet of Things technology across an enterprise and the residential sector has significantly acted as a prime 3D NAND flash driving market opportunity for the major player operating in this market. 

The 3D NAND flash memory market share is expected to witness notable growth during the forecast period, owing to rise in space constraints on the semiconductor wafer. Furthermore, high performance & low latency of 3D NAND flash memory driving the growth of the market. Moreover, increase in demand for data centres is expected to propel the 3D NAND flash memory market growth during the forecast period.

However, high manufacturing cost and precision required at the time of manufacturing are some of the prime factors restraining the 3D NAND flash memory market outlook. On the contrary, surge in penetrations of Internet of Things application is expected to provide lucrative opportunities for the growth of the 3D NAND flash memory market during the forecast period.

Top Impacting Factors

Significant factors that impact the growth of the global 3D NAND flash memory industry include high performance & low latency of 3D NAND flash memory paired with increase in demand for data centers. Moreover, rise in space constraints on the semiconductor wafer is expected to be opportunistic for the 3D NAND flask memory market. However, high manufacturing cost coupled with precision required at the time of manufacturing acts as a prime barrier for early adoption, which hampers the growth of the market. On the contrary, rise in penetrations of Internet of Things application is expected to offer potential growth opportunity for the 3D NAND flash memory market during the forecast period.

Segment Overview

The 3D NAND flash memory market is segmented based on type, application, end user, and region.

The type segment includes single-level cell, multi-level cell, and triple-level cell. The single-level cell segment dominated the market, in terms of revenue, in 2020, and is expected to follow the same trend during the forecast period.

3D NAND Flash Memory Market
By Type
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Triple-Level Cell segment influence the market in 2020, and expected to follow the same in future.

By application, the market is segmented into camera, laptops & PCs, smartphones & tablets. The laptops & PCs segment dominated the market in 2020 and anticipated to drive the market in the coming years.

3D NAND Flash Memory Market
By Application
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Smartphone & Tablet on the Move segment hold domination position in 2020.

By end user, it is divided into automotive, consumer electronics, enterprise, healthcare, and others. The enterprise segment acquired the largest share in 2020, and is expected to grow at a high CAGR from 2021 to 2030. 

3D NAND Flash Memory Market
By End User
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Consumer Electronics segment generated the highest revenue in 2020.

Region-wise, the 3D NAND flash memory market trends are analyzed across North America (the U.S., Canada, and Mexico), Europe (the UK, Germany, France, and the rest of the Europe), Asia-Pacific (China, Japan, India, South Korea, and the rest of the Asia-Pacific), and LAMEA (Latin America, the Middle East, and Africa). Asia-Pacific, specifically the China, remains a significant participant in the global 3D NAND flash memory market. Major organizations and government institutions in the country are intensely putting resources into the technology. 

3D NAND Flash Memory Market
By Region
2030
Asia-pacific 
North America
Europe
LAMEA

Asia-Pacific segment garner significant market share in 2020.

Competitive Analysis

Competitive analysis and profiles of the major 3D NAND flash memory market players, such as Samsung Electronics Co., Ltd., Toshiba Corporation, SK Hynix Semiconductor, Inc., Micron Technology, Inc., Intel Corporation, Apple Inc., Lenovo Group Ltd., Advanced Micro Devices, STMicroelectronics, and SanDisk Corporation are provided in this report. These key players have adopted strategies, such as product portfolio expansion, mergers & acquisitions, agreements, geographical expansion, and collaborations to enhance their market penetration.

COVID-19 Impact Analysis

The outbreak of COVID-19 has significantly impacted the growth of the NAND flash storage solution in 2020; however, the rise in demand for consumer electronics applications laptops, PCs, and gaming solutions is expected to drive the market growth in the coming years. Nevertheless, the 3D NAND flash memory market was principally hit by several obstacles created amid the COVID-19 pandemic such as lack of skilled workforce availability, delay or cancelation of projects owing to partial or complete lockdown globally. In contrast, rise in penetration of enterprise SSD and data center solution is driving the growth of the 3D NAND flash memory market during the forecast period. 

Key Benefits for Stakeholders

  • This study comprises analytical depiction of the 3D NAND flash memory market opportunities along with the current trends and future estimations to depict the imminent investment pockets.
  • The overall 3D NAND flash memory market analysis is determined to understand the profitable trends to gain a stronger foothold.
  • The report presents information related to key drivers, restraints, and opportunities with a detailed impact analysis.
  • The current 3D NAND flash memory market forecast is quantitatively analyzed from 2021 to 2030 to benchmark the financial competency.
  • Porter’s five forces analysis illustrates the potency of the buyers and suppliers in the smart display.
  • The report includes the market share of key vendors and 3D NAND flash memory market trends.

3D NAND Flash Memory Market Report Highlights

Aspects Details
3D NAND Flash Memory Market By Type
By Type
  • Single-level Cell
  • Multi-level Cell
  • Triple-level Cell
3D NAND Flash Memory Market By Application
By Application
  • Camera
  • Laptops and PCs
  • Smartphones & Tablets
  • Others
3D NAND Flash Memory Market By End User
By End User
  • Automotive
  • Consumer Electronics
  • Enterprise
  • Healthcare
  • Others
3D NAND Flash Memory Market By Region
By Region
  • North America  (U.S., Canada, Mexico)
  • Europe  (UK, Germany, France, Rest of Europe)
  • Asia-Pacific  (China, Japan, India, South Korea, Rest of Asia-Pacific)
  • LAMEA  (Latin America, Middle East, Africa)
3D NAND Flash Memory Market By Key Market Players
By Key Market Players
  • Samsung Electronics Co., Ltd.,
  • Toshiba Corporation
  • SK Hynix Semiconductor, Inc.
  • Micron Technology, Inc.,
  • Intel Corporation
  • Apple Inc.
  • Lenovo Group Ltd.,
  • Advanced Micro Devices
  • STMicroelectronics
  • SanDisk Corporation

Analyst Review

Globally, the 3D NAND flash memory industry has enormous development potential. The market, which is still in its early stages, has begun to contribute considerably to the data storage solution. Furthermore, the contribution to the global market is predicted to grow considerably in the coming years, owing to high demand from enterprise and commercial sectors. In addition, the rise in demand for the Internet of Things, smart infrastructure, and artificial intelligence solutions across the residential and healthcare sector is anticipated to drive the growth of the 3D NAND flash memory market in the coming years.

The global 3D NAND flash memory market is highly competitive, owing to the strong presence of existing vendors. 3D NAND flash memory vendors, who have access to extensive technical and financial resources, are anticipated to gain a competitive edge over their rivals, as they have the capacity to cater to the market requirements. The competitive environment in this market is expected to further intensify with increase in technological innovations, product extensions, and different strategies adopted by key vendors.

Surge in demand for VR gaming solution across residential sectors globally is driving the need to enhance 3D NAND flash memory solutions such as in-home system and mobile systems. Moreover, prime economics, such as the U.S., China, UK, and Japan, plan to develop and deploy next-generation 3D NAND flash memory solutions across various sectors. For instance, on November 09, 2020, Micron Technology, Inc., announced that it has started value shipment of world’s first 176-layer 3D NAND flash memory solution, which is anticipated to provide lucrative opportunities for the market growth.

Among the analyzed regions, Asia-Pacific exhibits the highest adoption rate of 3D NAND flash memory and has been experiencing massive expansion of the market. On the other hand, Asia-Pacific is expected to grow at a faster pace, predicting lucrative growth due to emerging countries, such as China, Japan, and India, investing in these technologies. Regions, such as the Middle East and Latin America, are also expected to offer new opportunities in the 3D NAND flash memory market in future.

Globally, various key players and government agencies are investing in 3D NAND flash memory to make them compatible with various industrial platforms. For instance, in 2021, Yangtze Memory Technologies Co. (YMTC), announced expansion of their NAND product liner by the mass production of 128-layer memory chip, addressing China's missing link in high-end solid-state drives, which is showcasing lucrative growth opportunities for the market growth. 

The key players profiled in the report include 3D NAND flash memory market players, such as Samsung Electronics Co., Ltd., Toshiba Corporation, SK Hynix Semiconductor, Inc., Micron Technology, Inc., Intel Corporation, Apple Inc., Lenovo Group Ltd., Advanced Micro Devices, STMicroelectronics, and SanDisk Corporation.

Author Name(s) : Himanshu Jangra| Tanumoy Upadhaya | Vineet Kumar
Frequently Asked Questions?

The 3D NAND flash memory market is estimated to grow at a CAGR of 20.3% from 2021 to 2030.

The 3D NAND flash memory market is projected to reach $78.42 billion by 2030.

To get the latest version of sample report

Rise in space constraints on the semiconductor wafer, High performance & low latency of 3D NAND flash memory.

The key players profiled in the report include Samsung Electronics Co., Ltd., Toshiba Corporation, SK Hynix Semiconductor, Inc., Micron Technology, and many more.

On the basis of top growing big corporations, we select top 10 players.

The 3D NAND flash memory market is segmented on the basis of type, application, end user, and region.

The key growth strategies of FPGA market players include product portfolio expansion, mergers & acquisitions, agreements, geographical expansion, and collaborations.

Laptop & Pc segment would grow at a highest CAGR of 21.1% during the forecast period.

Asia-Pacific region will dominate the market by the end of 2030.

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3D NAND Flash Memory Market

Global Opportunity Analysis and Industry Forecast, 2021-2030