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3D NAND Flash Memory Market by Type (Single-Level Cell, Multi-Level Cell, and Triple-Level Cell), Application (Cameras, Laptop & PCs, Smartphone & Tablets, and Others), and End Users (Automotive, Consumer Electronics, Enterprise, Healthcare, and Others): Global Opportunity Analysis and Industry Forecast, 2017 - 2025

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SE_161782
Pages: 255
Dec 2018 | 5978 Views
 
Author's : Rahul Kumar & Divyanshi Tewari
Tables: 126
Charts: NA
 

3D NAND Flash Memory Market Overview:

The global 3D NAND flash memory market size is expected to be $ 9,056.2 million in 2017, and is projected to reach $ 99,769.0 million by 2025, registering a CAGR of 35.3% from 2018 to 2025. Asia-Pacific is expected to be the highest contributor to the global market, with $ 3,984.7 million in 2017, and is estimated to reach $ 48,886.83 million by 2026, registering a CAGR of 37.1% during the forecast period.

3D NAND flash memory technology is utilized in various applications due to increase in demand for data storage. It offers large storage space while operating faster at a rather reduced cost. This technology has considerably evolved as the existing technologies were not able to effectively scale capacity to meet the increase in demand for data storage. The memory market for the semiconductor segment has witnessed significant growth due to continuous improvements in technology and increase in demand for data storage. Traditionally, to increase the storage capacity of the 2D planer-die, memory cells were crammed into a 2D layout. Owing to the relentless drive of shrinking the chip size coupled with the need for augmenting storage space, the evolution of 3D architecture became necessary.

The increase in demand for data storage across consumer electronics and enterprise storage sectors fuels the growth of the global 3D NAND flash memory market. Moreover, the growth in requirement of small-form factor has increased the scope for R&D for such memory devices.

The key players profiled in the report include Samsung Electronics Co., Ltd., Toshiba Corporation, SK Hynix Semiconductor, Inc., Micron Technology, Inc., Intel Corporation, Apple Inc., Lenovo Group Ltd., Advanced Micro Devices, STMicroelectronics, and SanDisk Corporation. These key players have adopted strategies such as product portfolio expansion, mergers & acquisitions, agreements, geographical expansion, and collaborations to enhance their market penetration.

3D NAND flash memory market

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Segmentation

The 3D NAND flash memory market is segmented on the basis of type, application, end user, and geography. On the basis of type, the market is divided into single-level cell (SLC), multi-level cell (MLC), and triple-level cell (TLC). Based on application, the market is categorized into cameras, laptops & PCs, smartphone & tablets, and others. Moreover, the application segment accounts for the highest revenue share to the 3D NAND flash memory market due to increase in demand for flash memory in the consumer electronics devices such as laptops, smartphones, and tablets. Based on end user, the market is segmented into automotive, consumer electronics, enterprise, healthcare, and others. Geographically, the market is analyzed across North America, Europe, Asia-Pacific, and LAMEA, along with their prominent countries.

3D NAND flash memory market by region

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Top Impacting Factors

The factors such as growing space constraints on the semiconductor wafer, high performance and low latency, positive environmental impact of 3D NAND flash memory, precision required at the time of manufacturing, high manufacturing cost, and rising internet of things are expected to significantly affect the growth of the global 3D NAND flash memory market. These factors are anticipated to either drive or hamper the market growth.

3D NAND flash memory market top impacting factor

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Growing space constraints on the semiconductor wafer

Over the past few years, the demand for smaller memory chips had propelled due to advancement in electronics and products. However, reducing the chip size or the device dimensions any further had become very difficult as it was two-dimensional. To manage the space constraints and the aforementioned issues, the memory cells of 3D NAND flash memory technology are stacked in vertical layers, leading to increased transistor density per area while not expanding the chip diameter. This is validated by Moore’s law that states the number of transistors on the densely integrated circuit doubles every two years. Moreover, with the technological advancements, increase in demand for storage space in much smaller chips by various smart devices is expected to be the major driver for the global market.

High manufacturing cost

The cost of manufacturing the 3D NAND flash memory chips is higher than conventional storage solutions such as external hard disks or 2D NAND flash memory chips. This can be attributed to the complexity in technology as it requires extremely high degree of precision for manufacturing. Consequently, the overall process incurs higher price than the conventional solutions. However, the storage capacity provided by the 3D NAND flash memory chips are over three times the 2D NAND flash memory chips, which makes it preferable over other storage solutions.

Rise of internet of things (IoT)

Rise in incorporation of “Internet of Things (IoT)” into various applications have significantly influenced the dynamics of technology. The IoT devices primarily comprise sensors, internet, and a compatible power source to run the device. As the network of inter-connected devices is expected to increase, it is anticipated to generate more data and result in the proliferation of the need for an efficient storage. Thus, IoT could have an indirect, but significant impact on the market growth.

Key Benefits for 3d Nand Flash Memory Market:

  • This study provides the analytical depiction of the global 3D NAND flash memory forecast along with the current trends and future estimations to determine the imminent investment pockets.

  • The report presents information regarding the key drivers, restraints, and opportunities.

  • The current market is quantitatively analyzed from 2017 to 2025 to highlight the financial competency of the industry.

  • Porter’s five forces analysis illustrates the potency of the buyers and suppliers in the industry.

3d Nand Flash Memory Market Segmentation:

By Type

  • Single-Level Cell (SLC)

  • Multi-Level Cell (MLC)

  • Triple-Level Cell (TLC)

By Application

  • Cameras

  • Laptops & PCs

  • Smartphone & Tablets

  • Others

By End User

  • Automotive

  • Consumer Electronics

  • Enterprise

  • Healthcare

  • Others

By Region

  • North America

    • U.S.

    • Canada

    • Mexico

  • Europe

    • UK

    • Germany

    • France

    • Rest of Europe

  • Asia-Pacific

    • China

    • Japan

    • India

    • South Korea

    • Rest of Asia-Pacific

  • LAMEA

    • Latin America

    • Middle East

    • Africa

Key Market Players Profiled

  • Samsung Electronics Co., Ltd.,

  • Toshiba Corporation,

  • SK Hynix Semiconductor, Inc.,

  • Micron Technology, Inc.,

  • Intel Corporation,

  • Apple Inc.,

  • Lenovo Group Ltd.,

  • Advanced Micro Devices,

  • STMicroelectronics,

  • SanDisk Corporation

 

Chapter: 1:  INTRODUCTION


              1.1.    REPORT DESCRIPTION
              1.2.    KEY MARKET SEGMENTS
              1.3.    KEY BENEFITS
              1.4.    RESEARCH METHODOLOGY
                         1.4.1.   PRIMARY RESEARCH
                         1.4.2.   SECONDARY RESEARCH
                         1.4.3.   ANALYST TOOLS AND MODELS


Chapter: 2:    EXECUTIVE SUMMARY


              2.1.    CXO PERSPECTIVE


Chapter: 3:    MARKET LANDSCAPE


              3.1.    MARKET DEFINITION AND SCOPE
              3.2.    KEY FINDINGS
                         3.2.1.   TOP INVESTMENT POCKETS
                         3.2.2.   TOP WINNING STRATEGIES
              3.3.    PORTER'S FIVE FORCES ANALYSIS
                         3.3.1.   BARGAINING POWER OF SUPPLIERS
                         3.3.2.   THREAT OF NEW ENTRANTS
                         3.3.3.   THREAT OF SUBSTITUTES
                         3.3.4.   COMPETITIVE RIVALRY
                         3.3.5.   BARGAINING POWER AMONG BUYERS
              3.4.    MARKET SHARE ANALYSIS/TOP PLAYER POSITIONING
              3.5.    MARKET DYNAMICS
                       3.5.1.     DRIVERS
                       3.5.2.     RESTRAINTS
                       3.5.3.     OPPORTUNITIES


Chapter: 4:   3D NAND MARKET MARKET BY TYPE


              4.1.    OVERVIEW
              4.2.     SINGLE LEVEL CELL (SLC)
                         4.2.1.   KEY MARKET TRENDS, GROWTH FACTORS AND OPPORTUNITIES
                         4.2.2.   MARKET SIZE AND FORECAST BY REGION
                         4.2.3.   MARKET ANALYSIS BY COUNTRY
              4.3.     MULTI LEVEL CELL MLC
                         4.3.1.   KEY MARKET TRENDS, GROWTH FACTORS AND OPPORTUNITIES
                         4.3.2.   MARKET SIZE AND FORECAST BY REGION
                         4.3.3.   MARKET ANALYSIS BY COUNTRY
              4.4.     TRIPLE LEVEL CELL TLC
                         4.4.1.   KEY MARKET TRENDS, GROWTH FACTORS AND OPPORTUNITIES
                         4.4.2.   MARKET SIZE AND FORECAST BY REGION
                         4.4.3.   MARKET ANALYSIS BY COUNTRY


Chapter: 5:   3D NAND MARKET MARKET BY APPLICATION


              5.1.    OVERVIEW
              5.2.     CAMERAS
                         5.2.1.   KEY MARKET TRENDS, GROWTH FACTORS AND OPPORTUNITIES
                         5.2.2.   MARKET SIZE AND FORECAST BY REGION
                         5.2.3.   MARKET ANALYSIS BY COUNTRY
              5.3.     LAPTOPS PCS
                         5.3.1.   KEY MARKET TRENDS, GROWTH FACTORS AND OPPORTUNITIES
                         5.3.2.   MARKET SIZE AND FORECAST BY REGION
                         5.3.3.   MARKET ANALYSIS BY COUNTRY
              5.4.     SMARTPHONE  TABLETS
                         5.4.1.   KEY MARKET TRENDS, GROWTH FACTORS AND OPPORTUNITIES
                         5.4.2.   MARKET SIZE AND FORECAST BY REGION
                         5.4.3.   MARKET ANALYSIS BY COUNTRY
              5.5.     OTHERS
                         5.5.1.   KEY MARKET TRENDS, GROWTH FACTORS AND OPPORTUNITIES
                         5.5.2.   MARKET SIZE AND FORECAST BY REGION
                         5.5.3.   MARKET ANALYSIS BY COUNTRY


Chapter: 6:   3D NAND MARKET MARKET BY END USER


              6.1.    OVERVIEW
              6.2.     AUTOMOTIVE
                         6.2.1.   KEY MARKET TRENDS, GROWTH FACTORS AND OPPORTUNITIES
                         6.2.2.   MARKET SIZE AND FORECAST BY REGION
                         6.2.3.   MARKET ANALYSIS BY COUNTRY
              6.3.     CONSUMER ELECTRONICS
                         6.3.1.   KEY MARKET TRENDS, GROWTH FACTORS AND OPPORTUNITIES
                         6.3.2.   MARKET SIZE AND FORECAST BY REGION
                         6.3.3.   MARKET ANALYSIS BY COUNTRY
              6.4.     ENTERPRISE
                         6.4.1.   KEY MARKET TRENDS, GROWTH FACTORS AND OPPORTUNITIES
                         6.4.2.   MARKET SIZE AND FORECAST BY REGION
                         6.4.3.   MARKET ANALYSIS BY COUNTRY
              6.5.     HEALTHCARE
                         6.5.1.   KEY MARKET TRENDS, GROWTH FACTORS AND OPPORTUNITIES
                         6.5.2.   MARKET SIZE AND FORECAST BY REGION
                         6.5.3.   MARKET ANALYSIS BY COUNTRY
              6.6.     OTHERS
                         6.6.1.   KEY MARKET TRENDS, GROWTH FACTORS AND OPPORTUNITIES
                         6.6.2.   MARKET SIZE AND FORECAST BY REGION
                         6.6.3.   MARKET ANALYSIS BY COUNTRY


Chapter: 7:    3D NAND MARKET MARKET BY REGION


              7.1.    OVERVIEW
              7.2.   NORTH AMERICA
                        7.2.1.   KEY MARKET TRENDS AND OPPORTUNITIES
                        7.2.2.   MARKET SIZE AND FORECAST BY TYPE
                        7.2.3.   MARKET SIZE AND FORECAST BY APPLICATION
                        7.2.4.   MARKET SIZE AND FORECAST BY END USER
                        7.2.5.   MARKET SIZE AND FORECAST BY COUNTRY
                        7.2.6.   US 3D NAND MARKET MARKET
                                      7.2.6.1.   MARKET SIZE AND FORECAST BY TYPE
                                      7.2.6.2.   MARKET SIZE AND FORECAST BY APPLICATION
                                      7.2.6.3.   MARKET SIZE AND FORECAST BY END USER
                        7.2.7.    CANADA 3D NAND MARKET MARKET
                                      7.2.7.1.   MARKET SIZE AND FORECAST BY TYPE
                                      7.2.7.2.   MARKET SIZE AND FORECAST BY APPLICATION
                                      7.2.7.3.   MARKET SIZE AND FORECAST BY END USER
                        7.2.8.    MEXICO 3D NAND MARKET MARKET
                                      7.2.8.1.   MARKET SIZE AND FORECAST BY TYPE
                                      7.2.8.2.   MARKET SIZE AND FORECAST BY APPLICATION
                                      7.2.8.3.   MARKET SIZE AND FORECAST BY END USER
              7.3.   EUROPE
                        7.3.1.   KEY MARKET TRENDS AND OPPORTUNITIES
                        7.3.2.   MARKET SIZE AND FORECAST BY TYPE
                        7.3.3.   MARKET SIZE AND FORECAST BY APPLICATION
                        7.3.4.   MARKET SIZE AND FORECAST BY END USER
                        7.3.5.   MARKET SIZE AND FORECAST BY COUNTRY
                        7.3.6.   UK 3D NAND MARKET MARKET
                                      7.3.6.1.   MARKET SIZE AND FORECAST BY TYPE
                                      7.3.6.2.   MARKET SIZE AND FORECAST BY APPLICATION
                                      7.3.6.3.   MARKET SIZE AND FORECAST BY END USER
                        7.3.7.    GERMANY 3D NAND MARKET MARKET
                                      7.3.7.1.   MARKET SIZE AND FORECAST BY TYPE
                                      7.3.7.2.   MARKET SIZE AND FORECAST BY APPLICATION
                                      7.3.7.3.   MARKET SIZE AND FORECAST BY END USER
                        7.3.8.    FRANCE 3D NAND MARKET MARKET
                                      7.3.8.1.   MARKET SIZE AND FORECAST BY TYPE
                                      7.3.8.2.   MARKET SIZE AND FORECAST BY APPLICATION
                                      7.3.8.3.   MARKET SIZE AND FORECAST BY END USER
                        7.3.9.    REST OF EUROPE 3D NAND MARKET MARKET
                                      7.3.9.1.   MARKET SIZE AND FORECAST BY TYPE
                                      7.3.9.2.   MARKET SIZE AND FORECAST BY APPLICATION
                                      7.3.9.3.   MARKET SIZE AND FORECAST BY END USER
              7.4.   ASIA PACIFIC
                        7.4.1.   KEY MARKET TRENDS AND OPPORTUNITIES
                        7.4.2.   MARKET SIZE AND FORECAST BY TYPE
                        7.4.3.   MARKET SIZE AND FORECAST BY APPLICATION
                        7.4.4.   MARKET SIZE AND FORECAST BY END USER
                        7.4.5.   MARKET SIZE AND FORECAST BY COUNTRY
                        7.4.6.   CHINA 3D NAND MARKET MARKET
                                      7.4.6.1.   MARKET SIZE AND FORECAST BY TYPE
                                      7.4.6.2.   MARKET SIZE AND FORECAST BY APPLICATION
                                      7.4.6.3.   MARKET SIZE AND FORECAST BY END USER
                        7.4.7.    JAPAN 3D NAND MARKET MARKET
                                      7.4.7.1.   MARKET SIZE AND FORECAST BY TYPE
                                      7.4.7.2.   MARKET SIZE AND FORECAST BY APPLICATION
                                      7.4.7.3.   MARKET SIZE AND FORECAST BY END USER
                        7.4.8.    INDIA 3D NAND MARKET MARKET
                                      7.4.8.1.   MARKET SIZE AND FORECAST BY TYPE
                                      7.4.8.2.   MARKET SIZE AND FORECAST BY APPLICATION
                                      7.4.8.3.   MARKET SIZE AND FORECAST BY END USER
                        7.4.9.    SOUTH KOREA 3D NAND MARKET MARKET
                                      7.4.9.1.   MARKET SIZE AND FORECAST BY TYPE
                                      7.4.9.2.   MARKET SIZE AND FORECAST BY APPLICATION
                                      7.4.9.3.   MARKET SIZE AND FORECAST BY END USER
                        7.4.10.    REST OF ASIA PACIFIC 3D NAND MARKET MARKET
                                      7.4.10.1.   MARKET SIZE AND FORECAST BY TYPE
                                      7.4.10.2.   MARKET SIZE AND FORECAST BY APPLICATION
                                      7.4.10.3.   MARKET SIZE AND FORECAST BY END USER
              7.5.   LAMEA
                        7.5.1.   KEY MARKET TRENDS AND OPPORTUNITIES
                        7.5.2.   MARKET SIZE AND FORECAST BY TYPE
                        7.5.3.   MARKET SIZE AND FORECAST BY APPLICATION
                        7.5.4.   MARKET SIZE AND FORECAST BY END USER
                        7.5.5.   MARKET SIZE AND FORECAST BY COUNTRY
                        7.5.6.   LATIN AMERICA 3D NAND MARKET MARKET
                                      7.5.6.1.   MARKET SIZE AND FORECAST BY TYPE
                                      7.5.6.2.   MARKET SIZE AND FORECAST BY APPLICATION
                                      7.5.6.3.   MARKET SIZE AND FORECAST BY END USER
                        7.5.7.    MIDDLE EAST 3D NAND MARKET MARKET
                                      7.5.7.1.   MARKET SIZE AND FORECAST BY TYPE
                                      7.5.7.2.   MARKET SIZE AND FORECAST BY APPLICATION
                                      7.5.7.3.   MARKET SIZE AND FORECAST BY END USER
                        7.5.8.    AFRICA 3D NAND MARKET MARKET
                                      7.5.8.1.   MARKET SIZE AND FORECAST BY TYPE
                                      7.5.8.2.   MARKET SIZE AND FORECAST BY APPLICATION
                                      7.5.8.3.   MARKET SIZE AND FORECAST BY END USER


Chapter: 8:    COMPANY PROFILES


              8.1.     SAMSUNG ELECTRONICS CO LTD
                        8.1.1.    COMPANY OVERVIEW
                        8.1.2.    BUSINESS PERFORMANCE
                        8.1.3.    KEY STRATEGIC MOVES AND DEVELOPMENTS
              8.2.     TOSHIBA CORPORATION
                        8.2.1.    COMPANY OVERVIEW
                        8.2.2.    BUSINESS PERFORMANCE
                        8.2.3.    KEY STRATEGIC MOVES AND DEVELOPMENTS
              8.3.     SK HYNIX SEMICONDUCTOR INC
                        8.3.1.    COMPANY OVERVIEW
                        8.3.2.    BUSINESS PERFORMANCE
                        8.3.3.    KEY STRATEGIC MOVES AND DEVELOPMENTS
              8.4.     MICRON TECHNOLOGY INC
                        8.4.1.    COMPANY OVERVIEW
                        8.4.2.    BUSINESS PERFORMANCE
                        8.4.3.    KEY STRATEGIC MOVES AND DEVELOPMENTS
              8.5.     INTEL CORPORATION
                        8.5.1.    COMPANY OVERVIEW
                        8.5.2.    BUSINESS PERFORMANCE
                        8.5.3.    KEY STRATEGIC MOVES AND DEVELOPMENTS
              8.6.     APPLE INC
                        8.6.1.    COMPANY OVERVIEW
                        8.6.2.    BUSINESS PERFORMANCE
                        8.6.3.    KEY STRATEGIC MOVES AND DEVELOPMENTS
              8.7.     LENOVO GROUP LTD
                        8.7.1.    COMPANY OVERVIEW
                        8.7.2.    BUSINESS PERFORMANCE
                        8.7.3.    KEY STRATEGIC MOVES AND DEVELOPMENTS
              8.8.     ADVANCED MICRO DEVICES
                        8.8.1.    COMPANY OVERVIEW
                        8.8.2.    BUSINESS PERFORMANCE
                        8.8.3.    KEY STRATEGIC MOVES AND DEVELOPMENTS
              8.9.     STMICROELECTRONICS
                        8.9.1.    COMPANY OVERVIEW
                        8.9.2.    BUSINESS PERFORMANCE
                        8.9.3.    KEY STRATEGIC MOVES AND DEVELOPMENTS
              8.10.     SANDISK CORPORATION
                        8.10.1.    COMPANY OVERVIEW
                        8.10.2.    BUSINESS PERFORMANCE
                        8.10.3.    KEY STRATEGIC MOVES AND DEVELOPMENTS

 

The memory market for the semiconductor segment has witnessed steady growth due to continuous improvements in technology and increase in demand for data storage. 3D NAND flash memory technology has been increasingly utilized in various applications due to increase in demand for data storage. It offers large storage space while operating faster at a rather reduced cost.

Increase in disposable income of the North American population drives the sales of the equipped 3D NAND flash memory devices. With growing demand for advanced products with improved features and larger storage, the need for energy-efficient memory devices is expected to fuel the market growth. Moreover, the advent of Internet of Things (IoT) has established a connected world that generates large volume of data, which needs to be secured. This increase in need for secure storage drives the 3D NAND flash memory market, thereby providing lucrative opportunities for the market growth during the forecast period.

Traditionally, memory cells were crammed into a 2D layout to increase the storage capacity of the 2D planer-die. Owing to the relentless drive of shrinking the chip size coupled with the need for augmenting storage space, the evolution of 3D architecture became necessary. Moreover, this cramming of memory cells created physical problems such as electrons leakage, cell-to-cell interference, and degradation in the overall performance of the memory chip. The 3D flash combats these problems due to its vertical stack design leading to an increased per-chip storage capacity.

The global 3D NAND flash memory market is expected to be $ 9,056.2 million in 2017, and is projected to reach $ 99,769.0 million by 2025, registering a CAGR of 35.3% from 2018 to 2025. Asia-Pacific is expected to account for the highest revenue in the global market throughout the forecast period (2018–2025).

The major players operating in the global 3D NAND flash memory market are Samsung Electronics Co., Ltd., Toshiba Corporation, SK Hynix Semiconductor, Inc., Micron Technology, Inc., Intel Corporation, Apple Inc., Lenovo Group Ltd., Advanced Micro Devices, STMicroelectronics, and SanDisk Corporation.

 

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