Allied Market Research

2024

Discrete Igbt Market

Discrete IGBT Market Size, Share, Competitive Landscape and Trend Analysis Report by Power Rate and by Application : Global Opportunity Analysis and Industry Forecast, 2023-2032

SE : Semiconductors

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Author's: | Sonia Mutreja
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Discrete IGBT Market Outlook – 2027 

An insulated gate bipolar transistor (IGBT) is a three-terminal power semiconductor device which is used as an electronic switch to offer rapid switching with high accuracy. It is also used in high-power applications such as for lamp ballasts, variable speed refrigerators, variable frequency drives (VFDs), electric cars, switching power supplies, trains, air conditioners, and arc-welding machines. It is also considered as a minority carrier device allowing faster switching rates and providing greater efficiency. 

Replacing Metal Oxide Semiconductor Field-Effect Transistor (MOSFET), which is compatible with greater current and voltage, is a cost-effective solution. It facilitates power management in various fields such as industrial systems, consumer electronics, and electric vehicles to improve energy conservation. Specifically, it is a monolithic combination of MOSFET and Bipolar Junction Transistor (BJT). It is currently to enhance switching speed and prevent power loss in renewable resources and electric vehicles.

The global discrete IGBT market is segmented on the basis of power rate, application, and region. Based on power rate, the discrete IGBT market is divided into high power, medium power, and low power. In terms of application, the market is categorized into energy & power, consumer electronics, inverter & UPS, electric vehicle, and medical devices & traction. Geographically, the market is analyzed across several regions such as North America, Europe, Asia-Pacific, and Latin America, Middle East & Africa (LAMEA).

Key players operating in the global discrete IGBT industry include Infineon Technologies AG (Germany), Fuji Electric Co., Ltd. (Japan), ON Semiconductor (US), Mitsubishi Electric Corporation (Japan), STMicroelectronics (Switzerland), Renesas Electronics Corporation (Japan), Vishay Intertechnology (US), ABB Ltd (Switzerland), SEMIKRON (Germany), and Hitachi, Ltd. (Japan). These companies have adopted several strategies such as product launches, partnerships, collaborations, mergers & acquisitions, and joint ventures to strengthen their foothold in the global discrete IGBT market. 

Top Impacting Factors 

Key factors that drive the market for the IGBT module globally are increased demand for introduction of smart power infrastructure in established regions such as North America and Europe, massive government incentives and increased need for enhanced power cycling capacity and thermal capacity. Besides these, the growing demand for energy-efficient electronic devices, the potential of IGBT to increase the efficiency of multiple electronic equipment as well as the potential to play a crucial role in the advances in technology of power electronics has further driven this growing market. Presently high-temperature leakage, however, hampers market growth.

Increase in Use of IGBT in Electric Vehicles

Due to the increasing demand for EVs / HEVs based on energy efficiency, environmental friendliness and affordability, the market for electric vehicles and hybrid electric vehicles is expected to provide lucrative opportunities. Growing concerns about automotive emissions and the depletion of non-renewable energy resources has prompted governmental organizations to invest in the development of electric vehicle infrastructure, such as Battery Electric Vehicle (BEV), Plug-in Hybrid Electric Vehicle (PHEV), and Hybrid Electric Vehicle (HEV) and Electric Vehicle Supply Equipment (EVSE). In electric vehicles IGBT plays an important role in controlling vehicles at high voltages and improving efficiency

Government Initiatives to Create HVDCs and Smart Grids

Old grid networks are being substituted by smart grids, since they are dependable, offer flexible network topology, have effectively higher load adjustment capacity, and allow troubleshooting in real-time. IGBT is utilized to facilitate ease of control at high voltage, since it allows for higher frequencies with increased efficiency. Furthermore, it is a minority carrier device with several advantages, like large bipolar current carrying capacity and high input impedance; therefore, it can be used in smart grid applications.

The insulated-gate bipolar transistor (IGBT) structure offers constant supply of electricity by minimizing power supply congestion, resulting in efficient power utilization. But the high cost of implementing and maintaining, deficiency of skilled professionals, and shortage of device stability at extreme weather conditions may challenge market growth. Even so, the market is projected to grow exceptionally in the years ahead with the deployment of IoT and smart grid in the upgraded modules. The main players of the market will follow the pattern of large-scale alliances and collaborations. Through widening their global footprints and rising global market share, these approaches would be beneficial to them.

Key Benefits of the Report

  • This study presents the analytical depiction of the global discrete IGBT market forecast along with the current trends and future estimations to determine the imminent investment pockets.
  • The report presents information related to key drivers, restraints, and opportunities along with detailed analysis of the global discrete IGBT market share.
  • The current market is quantitatively analyzed to highlight the global Discrete IGBT market growth scenario.
  • Porter’s five forces analysis illustrates the potency of buyers & suppliers in the market. 
  • The report provides a detailed global discrete IGBT market analysis based on competitive intensity and how the competition will take shape in coming years. 

COVID-19 Scenario Analysis 

  • Global discrete IGBT market has been significantly impacted by the COVID-19 outbreak. New projects throughout the world have stalled, which, in turn, have led to decline in demand for analog semiconductors. 
  • Global factories have struggled to integrate new analog discrete IGBTs as workers have stayed in their homes, which disrupted the global supply chains. 
  • The impact of COVID-19 on this market is temporary as just the production and supply chain is stalled. Once the situation improves, production, supply chains, and demand for discrete IGBTs are gradually going to increase.  
  • This COVID-19 lockdown would help companies think about more advanced discrete IGBTs to enhance efficiency.

Questions Answered in the Discrete IGBT Market Research Report

  • Which are the leading market players active in the discrete IGBT market?
  • What would be the detailed impact of COVID-19 on the discrete IGBT market size?
  • How current discrete IGBT market trends would influence the industry in the next few years?
  • What are the driving factors, restraints, and opportunities in the global market?
  • What are the projections for the future that would help in taking further strategic steps?

Discrete IGBT Market Report Highlights

Aspects Details
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By Power Rate
  • High Power
  • Medium Power
  • Low Power
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By Application
  • Energy and Power
  • Consumer Electronics
  • Inverter and UPS
  • Electric Vehicle
  • Industrial System
  • Medical Devices & Traction
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By Region
  • North America  (U.S., Canada)
  • Europe  (France, Germany, Italy, Spain, UK, Rest of Europe)
  • Asia-Pacific  (China, Japan, India, South Korea, Australia, Rest of Asia-Pacific)
  • LAMEA  (Latin America, Middle East, Africa, Rest of LAMEA)
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Key Market Players

Vishay Intertechnology, STMicroelectronics, Fuji Electric Co., Ltd., Infineon Technologies AG, ON Semiconductor, Mitsubishi Electric Corporation, SEMIKRON, Hitachi, Ltd., Renesas Electronics Corporation, ABB Ltd

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Discrete IGBT Market

Global Opportunity Analysis and Industry Forecast, 2023-2032