Gallium arsenide (GaAs) is a compound that comprises the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure. Gallium arsenide is used for producing devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells, and optical windows. GaAs can be manufactured using industrial processes such as vertical gradient freeze (VGF), Bridgman-Stockbarger technique, and liquid encapsulated Czochralski (LEC) growth. Alternative methods for constructing films of GaAs comprise VPE reaction of gaseous gallium metal & arsenic trichloride, MOCVD reaction of trimethylgallium & arsine and Molecular beam epitaxy (MBE) of gallium & arsenic.

Factors that are expected to fuel the growth of the global gallium arsenide market are demand for GaAs devices across various end-user industries such as aerospace & defense, electronics, and communications. In addition, owing to a wide direct bandgap material that resists radiation damage, GaAs is an excellent option for outer space electronics and optical windows in high power applications. In addition, other key factors driving the growth of the GaAs market include increase in adoption of 4G and 5G networks across the world. However, its high production cost is estimated to hamper the GaAs market. Further, emerging trends such as more electric aircraft, electronic warfare system, advancements in the broadband cellular network technology are estimated to provide lucrative opportunities for the growth of the market.

The global gallium arsenide market is segmented by type, application, and region. Based on type, the market is segmented into LEC grown GaAs, VGF grown GaAs, and other. Application is classified into smartphones, computer, photovoltaic cells, laser diodes, infrared emission, automotive electronics, military area, wireless communication, optoelectronic devices, and other. Based on region, the global gallium arsenide market is analyzed across North America, Europe, Asia-Pacific, and LAMEA (Latin America, Middle East and Africa).

Some of the key players operating in the global gallium arsenide market are AXT, Freiberger Compound Materials, AWSC, WIN Semiconductors, Sumitomo Electric, China Crystal Technologies, GCSs, Yunnan Germanium, DOWA Electronics Materials and Century Epitech.

Key Benefits for Stakeholders:

• The global gallium arsenide market size has been analyzed across four major regions.
• Porter’s five force analysis helps to analyze the potential of buyers & suppliers and the competitive scenario of gallium arsenide for strategy building.
• The report outlines the current market trends and future scenario of the market size from 2018 to 2026 to understand the prevailing opportunities and potential investment pockets. The market is forecasted for 2019-2026.
• Major countries in each region have been mapped according to their individual revenue contribution to the regional market.
• The key drivers, restraints, opportunities & gallium arsenide market trends along with their detailed impact analysis are elucidated in the study.
• The global gallium arsenide market analysis covers in-depth information of the major industry participants.

Scope of the Report:

Key Market Segmentation: In Table Format

Questions answered in the gallium arsenide market research report:

• What is the growth rate of the gallium arsenide market during the forecast period?
• What will be the global gallium arsenide market size from 2019 to 2026?
• Who are the leading manufacturing companies in the gallium arsenide market?
• How the major current trends will shape the market in the future?
• What are the driving factors and opportunities in the market?
• Which will be the niches at which players profiling with thorough plans, financials, and also recent advancements should set a presence?
• Why are some of the segments flourishing at the highest growth rate while others experience a steady growth?
• What are the conclusions of the gallium arsenide report?