Report Code: A05853 | Pages: NA | Mar 2023 | 3617 Views | ||
Author(s) : Eswara P | Tables: NA | Charts: NA |
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Request Now !Gallium arsenide (GaAs) is a compound that comprises the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure. Gallium arsenide is used for producing devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells, and optical windows. GaAs can be manufactured using industrial processes such as vertical gradient freeze (VGF), Bridgman-Stockbarger technique, and liquid encapsulated Czochralski (LEC) growth. Alternative methods for constructing films of GaAs comprise VPE reaction of gaseous gallium metal & arsenic trichloride, MOCVD reaction of trimethylgallium & arsine and Molecular beam epitaxy (MBE) of gallium & arsenic.
Factors that are expected to fuel the growth of the global gallium arsenide market are demand for GaAs devices across various end-user industries such as aerospace & defense, electronics, and communications. In addition, owing to a wide direct bandgap material that resists radiation damage, GaAs is an excellent option for outer space electronics and optical windows in high power applications. In addition, other key factors driving the growth of the GaAs market include increase in adoption of 4G and 5G networks across the world. However, its high production cost is estimated to hamper the GaAs market. Further, emerging trends such as more electric aircraft, electronic warfare system, advancements in the broadband cellular network technology are estimated to provide lucrative opportunities for the growth of the market.
The global gallium arsenide market is segmented by type, application, and region. Based on type, the market is segmented into LEC grown GaAs, VGF grown GaAs, and other. Application is classified into smartphones, computer, photovoltaic cells, laser diodes, infrared emission, automotive electronics, military area, wireless communication, optoelectronic devices, and other. Based on region, the global gallium arsenide market is analyzed across North America, Europe, Asia-Pacific, and LAMEA (Latin America, Middle East and Africa).
Some of the key players operating in the global gallium arsenide market are AXT, Freiberger Compound Materials, AWSC, WIN Semiconductors, Sumitomo Electric, China Crystal Technologies, GCSs, Yunnan Germanium, DOWA Electronics Materials and Century Epitech.
Scope of the Report:
Report Metric | Details |
 Market size available for years |  2018–2026 |
 Base year considered |  2018 |
 Forecast period |  2019–2026 |
 Forecast units |  Value (USD) |
 Segments covered |  Type, Application, and Region |
 Geographies covered | North America (US, Canada and Mexico), Europe (Germany, UK, France, and the Rest of Europe), Asia-Pacific (China, Japan, India, and the Rest of Asia-Pacific), Latin America (Brazil, Mexico, and the Rest of LAMEA) and The Middle East and Africa |
 Companies covered | Major players covered, include AXT, Freiberger Compound Materials, AWSC, WIN Semiconductors, Sumitomo Electric, China Crystal Technologies, GCSs, Yunnan Germanium, DOWA Electronics Materials and Century Epitech. |
Key Market Segmentation: In Table Format
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Questions answered in the gallium arsenide market research report:
Gallium Arsenide Market Report Highlights
Aspects | Details |
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Key Market Players | AXT, Freiberger Compound Materials, AWSC, WIN Semiconductors, Sumitomo Electric, China Crystal Technologies, GCSs, Yunnan Germanium, DOWA Electronics Materials, Century Epitech |
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