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InGaAs avalanche photodiode is a kind of semiconductor electronic device that uses photoelectric effect to convert light into electricity and is more sensitive as compared to a standard photodiode due to avalanche gain. These functional photomultipliers are used primarily for photon counting, low-level light detection, high speed switching, transit-time measurements, laser cutting, and reverse engineering in the industrial sector as these are integrated with optical systems and enhance higher rate of production.Â
Avalanche photodiodes are used preferably in the IT & telecom sector for long-range fiber communication, quantum sensing, and laser range-finding as they feature improved signal-to-noise ratio, greater linear response range, high quantum efficiency, and easy-installation. In addition, these devices find large-scale applications in the medical sector for position emission tomography to examine metabolic processes, brain functions, diagnosis of cancer, kidney stones, knee injuries as they are compact, lightweight, and cost-effective with larger active detection area.Â
InGaAs is utilized in lightning detection to search for extraterrestrial intelligence in research purposes as they are highly durable and robust in nature for operations in harsh environments and insensitive to magnetic fields. Extensive use of optical techniques in every sector as well as to solve research problems implies that the InGaAs avalanche photodiode market share would grow at a steady pace in the coming years.
The global InGaAs avalanche photodiode market is segmented on the basis of wavelength range, application, industry vertical, and region. Based on wavelength range, the InGaAs avalanche photodiode market is bifurcated into 1100 – 1700 nm and 1000 – 1600 nm. In terms of application, the market is categorized into missile warning system, muzzle flash detection, wafer defect inspection, laser rangefinders, and others. On the basis of industry vertical, the market is divided into commercial, IT & telecommunication, aerospace & defense, industrial, healthcare, and others. Geographically, the market is analyzed across several regions such as North America, Europe, Asia-Pacific, and Latin America, Middle East & Africa (LAMEA).
Top Impacting Factors
Increase in deployment of large-scale fiber optic networks and rise in adoption of broadband network architecture to facilitate fast long-distance communication in the telecom sector due to large active detection area and linear response range primarily drives the market growth. However, these devices are not suitable for use in low bandwidth systems, which tends to hinder the InGaAs avalanche photodiode market growth.
Contrarily, use of advanced optical technology in nuclear medicine functional imaging technique to observe metabolic processes in the body and to examine brain functions further boosts the InGaAs avalanche photodiode market growth. Huge investments in R&D by governments’ worldwide and innumerable advantages of avalanche photodiodes over standard photodiodes enable their use for research purposes.
Leading InGaAs avalanche photodiode market players adopt necessary methods to develop innovative and effective designs of InGaAs avalanche photodiodes to offer high-performance and cost-effective solutions for simple light detection to spectroscopy to complex missile guidance subsystems.
In June 2019, Hamamatsu Photonics, a Japanese manufacturer of optical sensors, electric light sources, introduced an InGaAs (Indium Gallium Arsenide) avalanche area image sensor or photodiode, G14674-0808W, using opto-semiconductor manufacturing technology.Â
The photonic device can detect short-wavelength IR light up to 2.55 µm and is installed in hyperspectral cameras to boost plastic recycling rate. Hyperspectral cameras screen and sort plastics contain flame-retardant resin to separate them from other plastics, hence enhancing improvement in image processing devices and sensing technology.
InGaAs avalanche photodiodes are integrated with optical machines and systems are used in manufacturing products and internal communication drives as well as for applications such as laser cutting and reverse engineering in the industrial sector.
In June 2020, Kyoto Semiconductor Ltd., an optoelectronic manufacturing company, launched KP-H KPDEH12L-CC1C, a high speed InGaAs photodiode with a view to support 400Gbps transmission systems. The photodiode achieves 40GHz as frequency band with integrated trans impedance amplifier.Â
The device is mounted on a carrier that is designed to achieve high frequency and condenser lens is integrated at the back to collect incoming light in light absorption area. This makes it easy to align optical fibers with photodiode that is mounted on a carrier twice as big as the chip itself.
Key Benefits of the Stakeholders
COVID-19 Scenario Analysis
Questions Answered in the InGaAs Avalanche Photodiode Market Research Report
InGaAs Avalanche Photodiode Market Report Highlights
Aspects | Details |
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By Wavelength Range |
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By Application |
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By Industry Vertical |
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By Region |
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Key Market Players | Excelitas Technologies, Lumentum Operations, Hamamatsu Photonics, OSI Optoelectronics, AMS Technologies AG, Renesas Electronic Corp., Kyosemi Corp., First Sensor, SiFotonics, Luna Optoelectronics |
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