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2021
Ingaas Avalanche Photodiode Market

InGaAs Avalanche Photodiode Market By Wavelength Range (1100 – 1700 nm and 1000 – 1600 nm), Application (Missile Warning System, Muzzle Flash Detection, Wafer Defect Inspection, Laser Rangefinders, and Others), Industry Vertical (Commercial, IT & Telecommunication, Aerospace & Defense, Industrial, Healthcare, and Others): Global Opportunity Analysis and Industry Forecast, 2020–2027

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InGaAs Avalanche Photodiode Market Outlook – 2027 

InGaAs avalanche photodiode is a kind of semiconductor electronic device that uses photoelectric effect to convert light into electricity and is more sensitive as compared to a standard photodiode due to avalanche gain. These functional photomultipliers are used primarily for photon counting, low-level light detection, high speed switching, transit-time measurements, laser cutting, and reverse engineering in the industrial sector as these are integrated with optical systems and enhance higher rate of production. 

Avalanche photodiodes are used preferably in the IT & telecom sector for long-range fiber communication, quantum sensing, and laser range-finding as they feature improved signal-to-noise ratio, greater linear response range, high quantum efficiency, and easy-installation. In addition, these devices find large-scale applications in the medical sector for position emission tomography to examine metabolic processes, brain functions, diagnosis of cancer, kidney stones, knee injuries as they are compact, lightweight, and cost-effective with larger active detection area. 

InGaAs is utilized in lightning detection to search for extraterrestrial intelligence in research purposes as they are highly durable and robust in nature for operations in harsh environments and insensitive to magnetic fields. Extensive use of optical techniques in every sector as well as to solve research problems implies that the InGaAs avalanche photodiode market share would grow at a steady pace in the coming years.

The global InGaAs avalanche photodiode market is segmented on the basis of wavelength range, application, industry vertical, and region. Based on wavelength range, the InGaAs avalanche photodiode market is bifurcated into 1100 – 1700 nm and 1000 – 1600 nm. In terms of application, the market is categorized into missile warning system, muzzle flash detection, wafer defect inspection, laser rangefinders, and others. On the basis of industry vertical, the market is divided into commercial, IT & telecommunication, aerospace & defense, industrial, healthcare, and others. Geographically, the market is analyzed across several regions such as North America, Europe, Asia-Pacific, and Latin America, Middle East & Africa (LAMEA).

Key players operating in the global InGaAs avalanche photodiode industry include Renesas Electronic Corp., Hamamatsu Photonics, OSI Optoelectronics, First Sensor, AMS Technologies AG, Luna Optoelectronics, Excelitas Technologies, Kyosemi Corp., Lumentum Operations, and SiFotonics. These companies have adopted several strategies such as product launches, partnerships, collaborations, mergers & acquisitions, and joint ventures to strengthen their foothold in the global InGaAs avalanche photodiode market. 

Top Impacting Factors

Increase in deployment of large-scale fiber optic networks and rise in adoption of broadband network architecture to facilitate fast long-distance communication in the telecom sector due to large active detection area and linear response range primarily drives the market growth. However, these devices are not suitable for use in low bandwidth systems, which tends to hinder the InGaAs avalanche photodiode market growth.

Contrarily, use of advanced optical technology in nuclear medicine functional imaging technique to observe metabolic processes in the body and to examine brain functions further boosts the InGaAs avalanche photodiode market growth. Huge investments in R&D by governments’ worldwide and innumerable advantages of avalanche photodiodes over standard photodiodes enable their use for research purposes.

New Product Launches to Flourish the Market

Leading InGaAs avalanche photodiode market players adopt necessary methods to develop innovative and effective designs of InGaAs avalanche photodiodes to offer high-performance and cost-effective solutions for simple light detection to spectroscopy to complex missile guidance subsystems.

In June 2019, Hamamatsu Photonics, a Japanese manufacturer of optical sensors, electric light sources, introduced an InGaAs (Indium Gallium Arsenide) avalanche area image sensor or photodiode, G14674-0808W, using opto-semiconductor manufacturing technology. 

The photonic device can detect short-wavelength IR light up to 2.55 µm and is installed in hyperspectral cameras to boost plastic recycling rate. Hyperspectral cameras screen and sort plastics contain flame-retardant resin to separate them from other plastics, hence enhancing improvement in image processing devices and sensing technology.

Surge in Use in Industrial and Automotive Application

InGaAs avalanche photodiodes are integrated with optical machines and systems are used in manufacturing products and internal communication drives as well as for applications such as laser cutting and reverse engineering in the industrial sector.

In June 2020, Kyoto Semiconductor Ltd., an optoelectronic manufacturing company, launched KP-H KPDEH12L-CC1C, a high speed InGaAs photodiode with a view to support 400Gbps transmission systems. The photodiode achieves 40GHz as frequency band with integrated trans impedance amplifier. 

The device is mounted on a carrier that is designed to achieve high frequency and condenser lens is integrated at the back to collect incoming light in light absorption area. This makes it easy to align optical fibers with photodiode that is mounted on a carrier twice as big as the chip itself.

Key Benefits of the Stakeholders

  • The study gives an analytical overview of InGaAs avalanche photodiode market forecast with current trends and future estimations to determine imminent investment pockets.
  • The report provides information related to key drivers, restraints, and opportunities along with detailed InGaAs avalanche photodiode market analysis.
  • The current InGaAs avalanche photodiode market trends are quantitatively analyzed from 2020 to 2027.
  • Porter’s five forces analysis illustrates the potency of buyers & suppliers in the market. 

Market Scope and Structure Analysis

Report Metric

Details

Market Size Available For Years

2019-2027

Base Year Considered

2019

Forecast Period

2020-2027

Forecast Unit

Value ($)

Segments Covered

Wavelength Range, Application, Industry Vertical, and Region

Region Covered

North America (U.S., Canada, and Mexico), Europe (Germany, UK, France, Russia, and rest of Europe), Asia Pacific (India, Japan, China and rest of Asia Pacific) and LAMEA (Latin America, Middle East, and Africa)

Companies Covered

Renesas Electronic Corp., Hamamatsu Photonics, OSI Optoelectronics, First Sensor, AMS Technologies AG, Luna Optoelectronics, Excelitas Technologies, Kyosemi Corp., Lumentum Operations, and SiFotonics

 

COVID-19 Scenario Analysis

  • The COVID-19 outbreak in Wuhan, logistical hub of China and worldwide has led to shutdown scenario and transportation restrictions to contain the virus outbreak. China is the largest consumer and supplier of electronic and semiconductor devices where Wuhan alone accounts for 20% of China’s perform capacity in optical devices industry. This causes discernible effect to domestic and overall global supply. Assessment of the likely impact of the virus on the overall InGaAs avalanche photodiode industry is highly speculative now.
  • In this situation of unprecedented nation-wide lockdown, companies are relying on data connectivity, which is the only way to communicate across borders. Most businesses are enabling employees to work from home and students are accessing virtual platforms for classes, thus relying on optical technology infrastructure to conduct business services as usual as possible. In 2020, Cisco reported that India witnessed 87% surge in data usage in the first week of lockdown while internet browsing was up by 72%. This uplifts the demand for avalanche photodiodes to enable long-range fiber optic communication and fulfill requirement of high bandwidth due to surge in data traffic.
  • In addition, use of optical technology to detect and diagnose metabolic processes, lung problems, and brain functions in the interior of the body as an aid to treat COVID-19 infected patients currently drives the market demand for avalanche photodiodes. Large-scale deployment of fiber optic networks in broadband network architecture is expected to compensate high plunge in revenue due to temporary demand lapse caused by shutdown of automotive operations in the industrial sector. The InGaAs avalanche photodiode market is expected to make rapid rebound through commencement of production operations after shutdown restrictions are lifted.

InGaAs Avalanche Photodiode Market Key Segments

Segments

Sub-Segments

Wavelength Range

  • 1100 - 1700 nm
  • 1000 - 1600 nm

Application

  • Missile Warning System
  • Muzzle Flash Detection
  • Wafer Defect Inspection
  • Laser Rangefinders
  • Others

Industry Vertical

  • Commercial
  • IT and Telecommunication
  • Aerospace and Defense
  • Industrial
  • Healthcare
  • Others

 

Questions Answered in the InGaAs Avalanche Photodiode Market Research Report

  • Who are the leading market players active in the InGaAs avalanche photodiode market?
  • What would be the detailed impact of COVID-19 on the InGaAs avalanche photodiode market size?
  • What current trends would influence the market in the next few years?
  • What are the driving factors, restraints, and opportunities in the InGaAs avalanche photodiode market?
  • What are the projections for the future that would help in taking further strategic steps?
 
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