A Gate driver IC is an integrated circuit chip, which is usually used in controlling power dissipation, current flow, heat flow, and initiates smooth switching actions in high power transistor gates, such as MOSFET and IGBT. The MOSFET/IGBTs isolated gate-electrode forms a capacitor (gate capacitor), which must be charged or discharged every time the respective transistor is switched on or off. As every transistor requires a particular gate voltage to switch on, the gate capacitor must be charged to at least the required gate voltage for the transistor to be switched on. This voltage is controlled by its driver IC. Similarly, the heat dissipation current through the transistors can be controlled by the use of driver ICs.
The Gate driver IC market is swiftly gaining popularity because the driver ICs act as an elemental controlling chip in power electronic circuits designed for high-temperature environments such as hybrid electric vehicle, aircraft, well logging, geothermal power generation, and others. Furthermore, SiC-based power devices or GaN-based power devices need gate driver circuits to link them with logic units. The placement of the gate driver circuit next to the power switch is optimal for minimizing system complexity. Successful operation of the gate driver circuit in a harsh environment, especially with minimal or no heat sink and without liquid cooling is expected to provide an additional growth environment for the market. The inability of the major isolation techniques to handle more than 50% duty cycle and increased loss of efficiency of the transistor by using driver ICs are two major restraints in the growth of this market.
The Gate driver IC market is broadly segmented based on type of transistor Gate, semiconductor material, mode of attachment of driver IC, isolation techniques, and application. On the basis of type of transistor, the market is classified into MOSFET and IGBT. By mode of attachment, the market is bifurcated into chip and discrete module. Based on semiconductor material, it is divided into gallium nitride (GaN) and silicon carbide (SiC). However, on the basis of isolation techniques, the market is classified into pulse transformers, level shifters, opto isolators and coreless transformers. Applications segment covered in the study include residential, commercial, and industrial.
- The study provides an in-depth analysis of the Gate driver IC market with current and future trends to elucidate the imminent investment pockets in the market.
- The report provides information about the key drivers, restraints, and opportunities with impact analysis.
- Quantitative analysis of the current trends and future estimations from 2017 to 2023 are provided to showcase the financial caliber of the market.
- Porters Five Forces model analysis of the industry illustrates the potency of the buyers & suppliers participating in the market.
By Type of Transistor Gate
By Semiconductor Material
- Gallium Nitride(GaN)
- Silicon Carbide(SiC)
By Mode of Attachment of Driver IC
- Discrete Module
- North America
- Texas Instruments Incorporated
- Mitsubishi Electric Corporation
- Dialog Semiconductor PLC
- Toshiba Corporation
- Maxim Integrated
- Rohm Co Ltd.
- Semtech Corporation
- Fairchild Semiconductor
- ON Semiconductor