Ferroelectric random-access memory (FRAM) is an acronym for ferroelectric random-access memory. It is a non-volatile, low-power, high-performance memory that stores data on ferro-electric film. High-speed RAM (DRAM and SRAM) and conventional non-volatile ...
A through-silicon via (TSV) or through-chip via in electronic engineering is a vertical electrical connection (via) that needs to pass or dies entirely through a silicon wafer. TSVs are high-performance interconnecting technologies ...
The global enterprise SSD market size was valued at $17.85 billion in 2020, and is projected to reach $46.89 billion by 2030, registering a CAGR of 10.2% from 2021 to 2030. An ...
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